GaN4AP
The goal of the 3-year GaN4AP project is to develop innovative Power Electronic Systems for power conversion and management based on unique GaN-based High Electron Mobility Transistors (HEMTs) that can help reach 99% power conversion efficiency.
One of the objectives of the GaN4AP project is to make GaN-based electronics, to allow the possibility of developing close-to-zero energy loss power electronic systems. This objective is in line with the Energy Efficiency Directive (2012/27/EU).
Funded by H2020 - ECSEL JU programme of the European Commission (Grant agreement no. 101007310), the GaN4AP project scheduled to be carried out from June 2021 to May 2024 has a budget of €64M.
This project has received funding from the ECSEL Joint Undertaking (JU) under Grant agreement number: 101007310. The JU receives support from the European Union’s Horizon 2020 research and innovation programme and from the different involved countries. The information contained in this website reflects only the authors’ view. EC is not responsible for any use that may be made of this information.
Partners of the project
DTSMNS, Schneider Electric, IUNET, AEG, AIXTRON, APSI3D, ATV, CEA, CRHEA, DOCK, EDA, ELDOR, ENEL-X, FCM, FERRARI, FHWS, FINEPOWER, IHPP, IMA, LUH, MECAPROM, NXP, SEMPA, ST, Synergie, TUE, UNIPRA, UNITOU, VALEO, WURTH.
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